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  • 基于硅基的CVD石墨烯与CVD氮化硼异质结构(11cm,8片装)
  • 基于硅基的CVD石墨烯与CVD氮化硼异质结构(11cm,8片装)
  • 基于硅基的CVD石墨烯与CVD氮化硼异质结构(11cm,8片装)
  • 基于硅基的CVD石墨烯与CVD氮化硼异质结构(11cm,8片装)
基于硅基的CVD石墨烯与CVD氮化硼异质结构(11cm,8片装)基于硅基的CVD石墨烯与CVD氮化硼异质结构(11cm,8片装)基于硅基的CVD石墨烯与CVD氮化硼异质结构(11cm,8片装)基于硅基的CVD石墨烯与CVD氮化硼异质结构(11cm,8片装)

基于硅基的CVD石墨烯与CVD氮化硼异质结构(11cm,8片装)

CVD Graphene/CVD Hexagonal Boron Nitride heterostructure on SiO2/Si wafer

Properties of Graphene/h-BN Film:

Single Layer Graphene Film on Single Layer h-BN Film transferred onto 285 nm (p-doped) SiO2/Si wafer

Size: 1cmx1cm; 8 pack

The thickness and quality of each film is controlled by Raman Spectroscopy

The coverage of this product is about 98%

The films are continuous, with minor holes and organic residues

High Crystalline Quality

The graphene film is premodominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)

Sheet Resistance: 430-800 Ω/square

Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 285 nm
Oxide Thickness: 285 nm
Color: Violet
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 ohm-cm
Type/Dopant: P/Boron
Orientation:
Front Surface: Polished
Back Surface: Etched

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